Method for manufacturing buried insulating layer type single crystal silicon carbide substrate and corresponding manufacturing device

摘要

A device for manufacturing a buried insulating layer type single crystal silicon carbide substrate from an SOI substrate (100) having a buried insulating layer (120) positioned on a silicon substrate (110) and a surface silicon layer (130) formed on this buried insulating layer (120) comprises:
a film formation chamber (200) for receiving an SOI substrate (100);
gas supplying means (300) for supplying into the film formation chamber (200) various types of gases;
irradiating means (400) for irradiating the surface silicon layer (130) of an SOI substrate (100) with infrared rays; and
control means (500) for controlling the gas supplying means (300) and the irradiating means (400),
characterised in that said irradiating means (400) is adapted to irradiate the surface silicon layer (130) of an SOI substrate (100) with infrared rays of a wavelength in the range from about 700 nm to 2500 nm.