发明名称 |
Method of manufacturing a transistor having a channel comprising germanium |
摘要 |
<p>The method involves forming an intermediate semiconductor layer (6) above a substrate (2), where the layer contains an alloy of silicon and germanium. Source, drain and insulated gate regions (11,12,9) of a MOS transistor are formed above the semiconductor layer. The semiconductor layer is oxidized from a lower surface of the layer for increasing concentration of germanium in a channel of the transistor.</p> |
申请公布号 |
EP1837916(A1) |
申请公布日期 |
2007.09.26 |
申请号 |
EP20070104318 |
申请日期 |
2007.03.16 |
申请人 |
ST MICROELECTRONICS S.A. |
发明人 |
MONFRAY, STEPHANE;SKOTNICKI, THOMAS;DUTARTRE, DIDIER;TALBOT, ALEXANDRE |
分类号 |
H01L29/786 |
主分类号 |
H01L29/786 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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