High performance semiconductor component with secondary passivation layer and associated method of manufacture

摘要

The component has a semiconductor body exhibiting trenches (18) and a primary passivation layer (24), which is arranged on a partial area of a main surface. The primary passivation layer is completely covered by a secondary passivation layer (34) made of a screen printable polyimide. The primary passivation layer is designed as a lead glass layer, where the semiconductor component is designed in a mesa structure or in a planar structure. The polyimide laterally overlaps an edge region of the primary passivation layer. An independent claim is also included for a method for manufacturing a power semiconductor component.