| 摘要 |
Substrates of GaN 15 are grown on a foreign substrate 10 by HVPE. Compound semiconductor nanostrucures 11,12 deposited on the foreign substrate act as nucleation sites or seed crystals for the growth of the GaN substrate by epitaxial layer overgrowth. The GaN substrate may be removed from the underlying nanostructures without damage to the nanostructures allowing the growth of further GaN substrates. |
