| 发明名称 |
METHOD FOR GROWING SILICON MONOCRYSTALS FROM THE MELT |
| 摘要 |
A method for growing silicon monocrystals from the melt comprises disposal of initial silicon in quartz-type crucible, warming-up and melting by high voltage glow discharge, seed melting and growing monocrystals of prescribed diameter and length. |
| 申请公布号 |
UA26471(U) |
申请公布日期 |
2007.09.25 |
| 申请号 |
UA20070004868U |
申请日期 |
2007.05.03 |
| 申请人 |
NATIONAL METALLURGICAL ACADEMY OF UKRAINE;ZAPORIZHIA STATE ENGINEERING ACADEMY |
发明人 |
TUTYK VALERII ANATOLIOVYCH;POZHUEV VOLODYMYR IVANOVYCH;HASYK MYKHAILO IVANOVYCH;CHERVONYI IVAN FEDOROVYCH |
| 分类号 |
C30B15/00 |
主分类号 |
C30B15/00 |
| 代理机构 |
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代理人 |
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