发明名称 |
Method for locally modifying electronic and optoelectronic properties of crystalline materials an devices made from such materials |
摘要 |
An electronic or optoelectronic device fabricated from a crystalline material in which a parameter of a bandgap characteristic of said crystalline material has been modified locally by introducing distortions on an atomic scale in the lattice structure of said crystalline material and the electronic and/or optoelectronic parameters of said device are dependent on the modification of said bandgap is exemplified by a radiation emissive optoelectronic semiconductor device which comprises a junction ( 10 ) formed from a p-type layer ( 11 ) and an n-type layer ( 12 ), both formed from indirect bandgap semiconductor material. The p-type layer ( 11 ) contains an array of dislocation loops which create a strain field to confine spatially and promote radiative recombination of the charge carriers.
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申请公布号 |
US7274041(B2) |
申请公布日期 |
2007.09.25 |
申请号 |
US20030297115 |
申请日期 |
2003.04.07 |
申请人 |
UNIVERSITY OF SURREY |
发明人 |
HOMEWOOD KEVIN PETER;GWILLIAM RUSSELL MARK;SHAO GUOSHENG |
分类号 |
H01L27/15;H01L33/00;H01L33/02;H01L33/34;H01S5/20 |
主分类号 |
H01L27/15 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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