| 摘要 |
A semiconductor apparatus is constructed such that the top surface, contacting a barrier metal film, of a conducting film embedded in a trench is located below the top surface of a second interlayer insulating film. The semiconductor apparatus is fabricated such that a plasma treatment is performed in a non-nitriding environment after a polishing process using CMP, so as to form a damaged layer on top of the second interlayer insulating film and the conducting film, and a portion of the damaged layer is removed by etching.
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