发明名称 Capacitor constructions
摘要 The invention includes methods of forming rugged electrically conductive surfaces. In one method, a layer is formed across a substrate and subsequently at least partially dissociated to form gaps extending to the substrate. An electrically conductive surface is formed to extend across the at least partially dissociated layer and within the gaps. The electrically conductive surface has a rugged topography imparted by the at least partially dissociated layer and the gaps. The topographically rugged surface can be incorporated into capacitor constructions. The capacitor constructions can be incorporated into DRAM cells, and such DRAM cells can be incorporated into electrical systems.
申请公布号 US7274059(B2) 申请公布日期 2007.09.25
申请号 US20060485926 申请日期 2006.07.12
申请人 MICRON TECHNOLOGY, INC. 发明人 PONTOH MARSELA;BASCERI CEM;GRAETTINGER THOMAS M.
分类号 H01L27/108;H01L21/02;H01L21/8242;H01L29/94 主分类号 H01L27/108
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