发明名称 CMP METHODE VON EINEM SUBSTRAT MIT EINER POLIERSCHEIBE MIT FLIXIERTEM SCHLEIFMITTEL
摘要 <p>A method for chemical-mechanical planarization of a substrate on a fixed-abrasive polishing pad in which a planarizing solution is dispensed onto the fixed-abrasive polishing pad. The planarizing solution is preferably an abrasive-free planarizing solution that oxidizes a surface layer on the substrate without passing the surface layer into solution, and the fixed-abrasive pad has a substantially uniform distribution of abrasive particles fixedly bonded to a suspension medium. The surface layer of the substrate is then pressed against the fixed-abrasive pad in the presence of planarizing solution, and at least one of the fixed-abrasive pad or the substrate moves relative to the other to remove material from the surface of the substrate. In operation, the planarizing solution forms a rough, scabrous layer of non-soluble oxides on the surface layer that are readily removed by the abrasive surface of the polishing pad. In one embodiment of the invention, the pH of the planarizing solution is controlled to oxidize the material of the surface layer without passing it into solution.</p>
申请公布号 AT373317(T) 申请公布日期 2007.09.15
申请号 AT19970946280T 申请日期 1997.10.17
申请人 MICRON TECHNOLOGY, INC. 发明人 HUDSON, GUY
分类号 H01L21/321;B24B37/24;H01L21/304;H01L21/306;H01L21/3105 主分类号 H01L21/321
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