| 摘要 |
<p>A sputtering target for half-tone phase shift blank mask, a half-tone phase shift blank mask and a photomask using the same, and a manufacturing method thereof are provided to obtain a prominent chemical resistance by using at least two or more kinds of transition metal and silicon. A sputtering target is used for manufacturing a half-tone phase shift blank mask having a transmittance of 0.1 percent and more in an exposure wavelength of 500nm and less. The sputtering target includes at least two or more kinds of transition metal and silicon. The transition metal is selected from a group including Mo, Ta, Pt, Cr, W, Zr, Hf, Nb, Ru, Pd, and Ti. The sputtering target is formed with one or more elements selected from an oxide, a nitride, a carbonate, and a fluoride. The composition of the sputtering target is transition of 1-80at%, silicon of 10-99at%, oxygen of 0-60at%, carbon of 0-60at%, nitrogen of 0-60at%, and fluorine of 0-60at%.</p> |
