ATOMIC LAYER DEPOSITION METHODS OF FORMING SILICON DIOXIDE COMPRISING LAYERS,申请号KR20067005133-传众专利搜索

首页产品黄页商标征信

会员服务注册登录

法人/股东/高管

发明名称	ATOMIC LAYER DEPOSITION METHODS OF FORMING SILICON DIOXIDE COMPRISING LAYERS
摘要
申请公布号	KR100758758(B1)	申请公布日期	2007.09.14
申请号	KR20067005133	申请日期	2006.03.14
申请人		发明人
分类号	H01L21/205;C23C16/40;C23C16/44;C23C16/455;H01L21/20	主分类号	H01L21/205
代理机构		代理人
主权项
地址

您可能感兴趣的专利

Process for using sludge from geothermal brine to make concrete and concrete composition

Lighting system for building

Magnetic recording medium having a back coat layer containing carbon black treated with fatty acids

Light rays radiation cloth for medical treatment

Plastic deformation relief

Contact lens and method of molding

TV receiver having freeze field display

Fuel tank tube vapor/fuel seal

Magnetic recording and reproducing device

Accordian folded electrode assembly

Method and circuit configuration for the control of wheel slip in vehicles with all-wheel drive

Integrated circuit carrier

AD converting device

LIQUID CRYSTAL PROJECTOR

STATIONAL OVERCURRENT PROTECTOR

Clutch engagement control system

Air chamber actuated dual tubing release assembly

Security pet door

Rolling shutter for roof window

Device for a welding torch