| 摘要 |
In a process and device for depositing an at least partially crystalline silicon layer a plasma is generated and a substrate ( 24 ) is exposed under the influence of the plasma to a silicon-containing source fluid for deposition of silicon therefrom. A pressure drop is applied between a location ( 12 ) where the source fluid is supplied and the substrate ( 24 ). In addition to the source fluid an auxiliary fluid is also injected which is able to etch non-crystalline silicon atoms. The substrate ( 24 ) is exposed to both the source fluid and the auxiliary fluid. |
