| 摘要 |
PROBLEM TO BE SOLVED: To provide a substrate processing method capable of improving production efficiency by allowing the film thickness of pattern-formed photoresists to be uniform in a substrate plane and shortening a processing time required for pattern formation, in reflow processing for dissolving a photoresist pattern to form a desired resist pattern. SOLUTION: This method has a step S2 of removing a part of the photoresist pattern used for an etching mask of a base film by re-development treatment; a step S3 of applying exposure processing to the photoresist pattern remaining on the base film by the re-development treatment to reform the surface of the photoresist pattern; and a step S4 of exposing the exposure-treated photoresist pattern in an solvent atmosphere to dissolve it, and masking a predetermined area. COPYRIGHT: (C)2007,JPO&INPIT |
