| 摘要 |
PROBLEM TO BE SOLVED: To estimate self bias voltage under arbitrary etching conditions with a simplified procedure. SOLUTION: A self bias voltage measuring method in an etching processing apparatus uses electrostatic suction mechanisms 1, 10 for sucking a sample 2; mechanisms 13, 14 for filling cooling gas 12 in the rear surface of the sample 2, and controlling its pressure; and means for measuring relative electrostatic suction force to the sample from a controlled state of the rear surface pressure of the sample 2 in processing. In this case, based on the controlled state of the rear surface pressure of the sample 2 when high frequency bias power is applied to the sample in processing, the relative electrostatic suction force of the sample and electrostatic suction voltage corresponding to the electrostatic suction force are acquired. Further, based on the controlled state of the rear surface pressure of the sample 2 when high frequency bias power is not applied to the sample in processing, the relative electrostatic suction force of the sample and the electrostatic suction voltage corresponding to the electrostatic suction force are acquired. Using both of the electrostatic suction force and the electrostatic suction voltage corresponding to the electrostatic suction force, the self bias voltage is estimated. COPYRIGHT: (C)2007,JPO&INPIT
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