| 摘要 |
PROBLEM TO BE SOLVED: To provide a semiconductor laser device which obtains high power and high reliability laser characteristics by reducing the stress near an active layer existing in a laser element. SOLUTION: The laser device comprises a first clad layer 3 formed on a semiconductor substrate 1, an active layer 4 formed on the first clad layer 3 having a strain-multiplex quantum well structure of alternately laminated well layers 4w and barrier layers 4b (barrier layers 4b<SB>1</SB>and optical guide layers 4b<SB>2</SB>) having mutually opposite strains, and a second clad layer 5 formed on the active layer 4. The strain quantity-film thickness product sumξ<SB>act</SB>of the active layer 4, the sum of the strain quantity-film thickness products determined by the strain quantities corresponding to the lattice constants of the well layers 4w and the barrier layers 4b, their film thicknesses, and their number of layers is set to a negative value. COPYRIGHT: (C)2007,JPO&INPIT
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