| 摘要 |
PROBLEM TO BE SOLVED: To provide a semiconductor device which can reduce threshold voltage. SOLUTION: The semiconductor device is provided with a pair of source/drain areas 4(14) which are formed on a silicon substrate 1 in a manner to pinch a channel area 3(13); and a gate electrode 6(16) including a metal-containing layer 7 which is formed on the channel area 3(13) with a gate insulation film 5 in-between, and is arranged adjacent to a boundary surface with the gate insulation film 5. The metal-containing layer 7 is formed like a dot to partly cover the surface of the gate insulation film 5, and an average distance between dots of the metal-containing layer 7 is set to be a diameter or less of the dot of the metal-containing layer 7. COPYRIGHT: (C)2007,JPO&INPIT
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