发明名称 |
CALIBRATION SYSTEM FOR WRITING AND READING MULTIPLE STATES INTO PHASE CHANGE MEMORY |
摘要 |
A phase change memory system includes M phase change memory cells, where M is an integer greater than or equal to one. A write module selectively writes at least one of the M phase change memory cells based on a write parameter. A read module selectively reads back a resistance value for the at least one of the M phase change memory cells. A control module communicates with the write module and the read module and triggers write/read cycles N times where N is an integer greater than one. The control module also adjusts a write parameter of one of the N write/read cycles based on at least one prior resistance value and a target resistance value. |
申请公布号 |
WO2007103220(A2) |
申请公布日期 |
2007.09.13 |
申请号 |
WO2007US05450 |
申请日期 |
2007.03.02 |
申请人 |
MARVELL WORLD TRADE LTD.;SUTARDJA, PANTAS |
发明人 |
SUTARDJA, PANTAS |
分类号 |
G11C29/02;G11C16/02 |
主分类号 |
G11C29/02 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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