| 摘要 |
PROBLEM TO BE SOLVED: To provide a capacitance type pressure sensor having sufficient junction strength between substrates, and capable of exhibiting a sufficient sensor characteristic, even when an extraction electrode exists in a junction area between the substrates. SOLUTION: In this capacitance type pressure sensor of the present invention, contact resistance between the contact layer 15 and the silicon substrate 13 is stabilized by interposing a gold-silicon eutectic layer 16' between the contact layer 15 and the silicon substrate 13, that is, by connecting the contact layer 15 electrically to the silicon substrate 13, using a gold-silicon eutectic reaction, when anodic-joining the silicon substrate 13 to a glass substrate 20, and a Q-value of the sensor is thereby stabilized to exhibit the sufficient sensor characteristic. The sufficient junction strength is also provided between the contact layer 15 and the silicon substrate 13, because connected by the gold-silicon eutectic reaction. COPYRIGHT: (C)2007,JPO&INPIT
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