TRENCH TYPE SCHOTTKY RECTIFIER WITH OXIDE MASS IN TRENCH BOTTOM

摘要

A trench type junction barrier rectifier has silicon dioxide spacers at the bottom of trenches in a silicon surface and beneath the bottom of a conductive polysilicon filler in the trench. A Schottky barrier electrode is connected to the tops of the mesas and the tops of the polysilicon fillers. Further oxide spacers may be formed in the length of the polysilicon fillers.