发明名称 Photoelectric conversion device and image sensor
摘要 A photoelectric conversion device ( 10 ) includes a first conductivity type first semiconductor region ( 10 a) located in a pixel region ( 11 ), a second conductivity type second semiconductor region ( 12 ) provided in the first semiconductor region ( 10 a), for storing a signal charge, interconnecting portions ( 13 and 14 ) for connecting the second semiconductor region ( 12 ) with a circuit element provided outside the pixel region ( 11 ), and an organic film ( 16 ) which is provided above a portion located in the pixel region ( 11 ) in the interconnecting portions ( 13 and 14 ) through an insulating protective film ( 15 ) and held at a predetermined potential. The organic film ( 16 ) is made of a thermoplastic polyimide resin containing one of a conductive particle and a conductive fiber.
申请公布号 US2007210396(A1) 申请公布日期 2007.09.13
申请号 US20070713244 申请日期 2007.03.02
申请人 OMI TOSHIHIKO 发明人 OMI TOSHIHIKO
分类号 H01L27/14 主分类号 H01L27/14
代理机构 代理人
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