<p>A power metal-oxide-semiconductor field effect transistor (MOSFET) (100) incorporates a stepped drift region including a shallow trench insulator (STI) (112) partially overlapped by the gate (114) and which extends a portion of the distance to a drain region (122). A silicide block extends from and partially overlaps STI (112) and drain region (122). The STI (112) has a width that is approximately 50% to 75% of the drift region.</p>
申请公布号
WO2007103610(A2)
申请公布日期
2007.09.13
申请号
WO2007US61843
申请日期
2007.02.08
申请人
FREESCALE SEMICONDUCTOR INC.;ROGGENBAUER, TODD C.;ZHU, RONGHUA;BOSE, AMITAVA;KHEMKA, VISHNU K.