| 摘要 |
PROBLEM TO BE SOLVED: To provide a semiconductor device capable of improving the electrical characteristics of an element, and to provide a method for forming a trench. SOLUTION: In the method for forming the trench, the trench 3 is formed to an n<SP>-</SP>drift layer 2 consisting of SiC. The method has a groove process for forming a groove to the main surface 2a of the n<SP>-</SP>drift layer 2, and a trench process for forming the trench 3 by etching the groove. The width of the groove is reduced monotonously towards the depth direction. Each of surfaces 3a, 3b and 3c of the trench 3 is not brought into contact at mutual acute angles, and curved in the depth direction. COPYRIGHT: (C)2007,JPO&INPIT |
