Magnetron Sputtering Device In which Two Modes Of Magnetic Flux Distribution (Balanced Mode/Unbalanced Mode) Can Be Switched From One To The Other And Vice Versa, A Film Formation Method For Forming A Film From An Inorganic Film Formation Material Using The Device, And A Dual Mode Magnetron Sputtering Device And Film Formation Method For Forming A Film From An Inorganic Film Formation Material At A Low Temperature Using The Device

摘要

The first object of this invention is to provide a magnetron sputtering device in which switching the magnetic field arrangement from the balanced mode to the unbalanced one and vice versa can be easily achieved. The second object is to provide a dual magnetron sputtering device which allows one to rapidly form a film from an inorganic film formation material over a wide temperature range from a low to high temperature. Provided is a magnetron sputtering device in which a sputtering cathode is arranged to produce a balanced distribution of magnetic fluxes and in which an article that exhibits ferromagnetism at room temperature is removably placed close to the surface of the sputtering cathode for holding a material target such that conversion of the balanced magnetic field arrangement into the unbalanced one can be easily achieved by removing the ferromagnetic article. Further provided is a dual magnetron sputtering device in which an angle formed between two lines one extending from the surface of material target of one magnetron and the other from the surface of opposite target of the other magnetron falls within a range of 160 to 20°, preferably 160 to 70°, so that an active focus of plasma can converge onto a substrate, to enable the rapid formation of a film there at a low temperature. The rapid and low temperature film formation is further enhanced by adjusting the two magnetrons so as to produce an unbalanced distribution of magnetic fluxes, and using a gas mixture comprising two or more rare gases as a sputtering gas.