| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a semiconductor light-emitting element which achieves white light emission without using phosphor powder or phosphor paint. <P>SOLUTION: In a GaN substrate 100, the light output surface 103 side is doped with Si having a concentration of 1×10<SP>19</SP>/cm<SP>3</SP>to form a yellow region emitter 101, and the epitaxial growth surface side is doped with Si and Zn both having a concentration of 1×10<SP>19</SP>/cm<SP>3</SP>to form a blue region emitter 102. An ultraviolet emitter region is formed on the blue region emitter 102, comprising n-type contact layer 104 made of an Si-doped GaN of about 8.0 μm in thickness, a distortion relaxation layer 105 made of an In<SB>0.03</SB>Ga<SB>0.97</SB>N, an emission layer 106 having a multiple quantum well (MQW) structure of a lamination for 20 periods and made of a non-doped GaN of 20 nm in thickness and a non-doped In<SB>0.07</SB>Ga<SB>0.93</SB>N of 3 nm in thickness, a p-type layer 107 made of an Mg-doped Al<SB>0.08</SB>Ga<SB>0.92</SB>N, and a p-type contact layer 108 made of an Mg-doped GaN. A group of layers from the n-type contact layer 104 to the p-type contact layer 108 compose a UV-ray emission portion. <P>COPYRIGHT: (C)2007,JPO&INPIT |
