| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a method of manufacturing a nitride semiconductor light-emitting element capable of reducing a forward voltage (Vf) while having a high light-emitting output. <P>SOLUTION: The nitride semiconductor light-emitting element is provided with at least an n-type nitride semiconductor, a p-type nitride semiconductor and an active layer formed between the n- and p-type nitride semiconductors. The n-type nitride semiconductor includes at least an n-type contact layer and an n-side GaN layer, and the n-side GaN layer consists of a single- or multi-layer non-doped layer and/or an n-type layer. The method of manufacturing the nitride semiconductor light-emitting element includes a step of forming the n-side GaN layer by an organic metal vapor phase growth method while using a nitrogen-containing gas as a carrier gas so that the n-side GaN layer can be formed between the n-type contact layer and the active layer. <P>COPYRIGHT: (C)2007,JPO&INPIT |
