| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a semiconductor light emitting element capable of obtaining high luminance. <P>SOLUTION: The semiconductor light emitting element A1 includes: a substrate 1, an n-GaN layer 2 laminated on the substrate 1, an active layer 3, and a p-GaN layer 4. A plurality of projections 71 are formed on a side surface 7 extending along the laminating direction of the semiconductor light emitting element A1. When the wave length of light to be emitted from the active layer 3 is defined as λ and the refractive index of the n-GaN layer 2 or the p-GaN layer 4 is as n, the average width W<SB>A</SB>of the widths of the bottoms of the projections 71 is defined as W<SB>A</SB>≥λ/n. <P>COPYRIGHT: (C)2007,JPO&INPIT |
