| 摘要 |
PROBLEM TO BE SOLVED: To provide a substrate processing method, capable of preventing the occurrence of faults such as wire breaking, and capable of efficiently forming a pattern, having sufficient uniformity to a predetermined area to be masked in a reflow process in which a resist pattern is dissolved for forming a desired pattern. SOLUTION: The present invention comprises a step, in which a thin-film part is removed from a resist pattern 206 having a thick film part and a thin-film part by redeveloping processing, and a step, in which the resist 206 formed on the foundation film 205 by the redeveloping processing is dissolved and passed through a section of a different level 205a, formed at the fringe of the foundation film 205 for masking a predetermined area Tg. In the step for masking a predetermined area Tg, the photoresist 206 is dissolved at a first dissolution speed mode on the foundation film 205; and after the photoresist to be dissolved has reached the section of a different level 205a, the photoresist 206 is dissolved at a second dissolution speed mode, which is slower than the first dissolution speed mode in the dissolution speed. COPYRIGHT: (C)2007,JPO&INPIT |
