METHOD FOR MANUFACTURING SILICON CARBIDE SINGLE CRYSTAL INGOT, AND SILICON CARBIDE SINGLE CRYSTAL INGOT

摘要

PROBLEM TO BE SOLVED: To provide a method for producing an SiC single crystal ingot from which large-diameter, good-quality face ä0001} wafers almost free from dislocation defects can inexpensively be obtained with good reproducibility. SOLUTION: A part or the whole of silicon carbide single crystal 12 is grown using a seed crystal 1 by a sublimation-recrystallization method in such a state as to increase the electron concentration of the growing single crystal 12 to≥1×1019cm-3but≤6×1020cm-3. Thereby, the dislocation defect is reduced to obtain the high-quality, large-diameter silicon carbide single crystal ingot 12. COPYRIGHT: (C)2007,JPO&INPIT