发明名称 |
Method and composition for plasma etching of a self-aligned contact opening |
摘要 |
A method of forming a self-aligned contact opening in an insulative layer formed over a substrate in a semiconductor device involves etching the insulative layer with at least one fluorocarbon and ammonia.
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申请公布号 |
US2007212885(A1) |
申请公布日期 |
2007.09.13 |
申请号 |
US20070711867 |
申请日期 |
2007.02.28 |
申请人 |
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发明人 |
TRAPP SHANE J. |
分类号 |
H01L21/311;H01L21/033;H01L21/762 |
主分类号 |
H01L21/311 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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