发明名称 Method for growing single crystals of vanadium dioxide
摘要 A method for growing a single crystal of vanadium dioxide comprises formng a melt of vanadium pentoxide, thermally decomposing a portion of the melt to form vanadium dioxide and precipitating the vanadium dioxide (m.p. 1700 DEG C.) from the remaining molten vanadium pentoxide (m.p. 690 DEG C.). The vanadium dioxide may be grown on to a seed crystal which is gradually withdrawn from the melt. If the melt is allowed to solidify the single crystal of vanadium dioxide is recovered by dissolving the vanadium pentoxide mass in a dilute aqueous solution of ammonia or sodium carbonate.
申请公布号 GB1095805(A) 申请公布日期 1967.12.20
申请号 GB19650023092 申请日期 1965.05.31
申请人 MATSUSHITA ELECTRIC INDUSTRIAL CO., LTD. 发明人
分类号 C01G31/02;C30B9/00;C30B11/00;C30B15/00;C30B17/00;H01C7/04 主分类号 C01G31/02
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