| 摘要 |
<PICT:1095704/C6-C7/1> A resistive thin film is formed on a substrate by cathodic sputtering, reactive sputtering or vacuum evaporation. The substrate may be of glass, plastic, mica or ceramic material and the thin film may be of one of a number of metals, or compounds thereof. In Fig. 7 a thin film of tantalum nitride is deposited over gold terminals, previously deposited and fired, on to a glass microscope slide which has previously been washed in a detergent, rinsed and boiled in acqua regia or nitrogen peroxide. The cathode 79 is of tantalum (though titanium, niobium aluminium, hafnium zirconium &c., or a coating or wrapping thereof, may be used). The chamber 74 is first evacuated to 2 x10-6 mm. of mercury then the substrate sheet 71 is heated to 400 DEG C. after which nitrogen is introduced into chamber 74 at a dynamic pressure followed by argon at a pressure of 15 microns of mercury. During sputtering the partial pressure of the nitrogen is maintained at 6 x10-4 mm. of mercury. Sputtering is conducted for about 5 minutes using a 5000 volts D.C. or an asymmetric or biased D.C. source. |
