发明名称 Memory device and an array of conductive lines and methods of making the same
摘要 An array of conductive lines is formed on or at least partially in a semiconductor substrate. The array includes a number of conductive lines extending in a first direction, a number of landing pads made of a conductive material, with individual landing pads being connected to corresponding ones of the conductive lines, wherein the conductive lines include first and second subsets of conductive lines. The conductive lines of the first subset alternate with the conductive lines of the second subset, wherein the landing pads connected to the conductive lines of the first subset are disposed on a first side of the conductive lines, and the landing pads connected to the conductive lines of the second subset are disposed on a second side of the conductive lines, the first side being opposite to the second side.
申请公布号 US2007210449(A1) 申请公布日期 2007.09.13
申请号 US20060369013 申请日期 2006.03.07
申请人 发明人 CASPARY DIRK;PARASCANDOLA STEFANO
分类号 H01L23/48 主分类号 H01L23/48
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