SILICON CARBIDE SEMICONDUCTOR DEVICE

摘要

PROBLEM TO BE SOLVED: To provide a silicon carbide semiconductor device capable of applying more current per unit cell, i.e. capable of further reducing ON-resistance. SOLUTION: The silicon carbide semiconductor device has a drain region 3 consisting of an n-type silicon carbide semiconductor; a first base region 4 contacting the drain region 3 and consisting of a p-type silicon carbide semiconductor; a source region 5 contacting the first base region 4 and consisting of an n-type silicon carbide semiconductor; a second base region 6 contacting the source region 5 and consisting of a p-type silicon carbide semiconductor opposite to the first base region 4 via a predetermined region of the drain region 3; and a gate electrode 9 contacting the surface of the first base region sandwiched by at least the source region 5 and the drain region 3 via a gate insulating film. COPYRIGHT: (C)2007,JPO&INPIT