| 摘要 |
A method of manufacturing an MIS semiconductor device includes forming a high dielectric film on a main surface of a semiconductor substrate, forming a silicon film on the high dielectric film, annealing the semiconductor substrate after the silicon film is formed, processing the high dielectric film and the silicon film into a gate pattern after the semiconductor substrate is annealed, to form a gate insulating film and a gate electrode, and forming source and drain regions on the main surface of the semiconductor substrate using the gate electrode as a mask.
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