| 摘要 |
In one embodiment, a shared contact structure electrically connects a gate, a diffusion region, and another diffusion region. The shared contact structure may comprise a trench that exposes the gate, the diffusion region, and the other diffusion region. The trench may be filled with a metal to form electrical connections. The trench may be formed in a dielectric layer using a self-aligned etch step, for example.
|
