| 摘要 |
<p>A semiconductor device comprising a capacitor (36) formed on a semiconductor substrate (10) and having a lower electrode (30), a dielectric film (32) and an upper electrode (34), a first insulating film (68) formed above the capacitor (36), first wiring (88a) formed on the first insulating film (68), a second insulating film (90) formed on the first insulating film (68) and the first wiring (88a), an electrode pad (102) formed on the second insulating film (90), and a single conductor (100) buried in the second insulating film (90) directly under the electrode pad (102) at least up to a part of the first insulating film (68) while penetrating the second insulating film (90). Since a rigid conductor (100) is formed directly under the electrode pad (102), a crack reaching the first insulating film (68) and the like, does not occur in the conductor (100) and the dielectric film (32) of the capacitor (36) can be surely protected against deterioration due to hydrogen or moisture.</p> |
