Verfahren zur Herstellung einer photolithographischen Maske

摘要

Photolithographic mask for structurization of a photosensitive material (I), especially on a wafer, with structure area(s) (30) for forming copying a structure on (I) and an absorber structure (20) for absorption of incident radiation, also has protective layer(s) (40) of chemically- and mechanically-stable material (II) on structure area(s) (30). Independent claims are also included for 4 methods of making the mask.