| 摘要 |
PROBLEM TO BE SOLVED: To provide a semiconductor device having a high etching selectivity and capable of suppressing an exfoliation of a mask layer, and to provide its manufacturing method. SOLUTION: The semiconductor device has an opening part (22) on a layer (10) to be etched including at least one of a silicon carbide, a silicon oxide, a sapphire, a gallium nitride, an aluminum gallium nitride, an indium gallium nitride, and an aluminum nitride. The method for manufacturing the semiconductor device comprises the steps of forming a mask layer (18) with a nickel chrome film, a gold film and a nickel film formed in this order from the layer (10) side, and etching the layer (10) with the layer (18) as the mask. COPYRIGHT: (C)2007,JPO&INPIT
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