发明名称 |
Method and system for enhanced lithographic patterning |
摘要 |
A double patterning system and process using a carbon-based hard mask. The double patterning system provides a means to form hard mask features in single hard mask etch step with a feature spacing smaller than a minimum spacing printable in the hard mask based on a single exposure.
|
申请公布号 |
US2007212649(A1) |
申请公布日期 |
2007.09.13 |
申请号 |
US20060369222 |
申请日期 |
2006.03.07 |
申请人 |
ASML NETHERLANDS B.V. |
发明人 |
LALBAHADOERSING SANJAYSINGH;MUSA SAMI |
分类号 |
G03F7/20 |
主分类号 |
G03F7/20 |
代理机构 |
|
代理人 |
|
主权项 |
|
地址 |
|