发明名称 Method and system for enhanced lithographic patterning
摘要 A double patterning system and process using a carbon-based hard mask. The double patterning system provides a means to form hard mask features in single hard mask etch step with a feature spacing smaller than a minimum spacing printable in the hard mask based on a single exposure.
申请公布号 US2007212649(A1) 申请公布日期 2007.09.13
申请号 US20060369222 申请日期 2006.03.07
申请人 ASML NETHERLANDS B.V. 发明人 LALBAHADOERSING SANJAYSINGH;MUSA SAMI
分类号 G03F7/20 主分类号 G03F7/20
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