发明名称 |
SEMICONDUCTOR DEVICE WITH CHARGE STORAGE PATTERN AND METHOD FOR FABRICATING THE SAME |
摘要 |
A semiconductor device (e.g., a non-volatile memory device) with improved data retention characteristics includes active regions that protrude above a top surface of a device isolation region. A tunneling insulating layer is formed on the active regions. Charge storage patterns (e.g., charge trap patterns) are formed so as to be spaced apart from each other. A blocking insulating layer and a gate are formed on the charge storage patterns.
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申请公布号 |
US2007212880(A1) |
申请公布日期 |
2007.09.13 |
申请号 |
US20070683383 |
申请日期 |
2007.03.07 |
申请人 |
SAMSUNG ELECTRONICS CO., LTD. |
发明人 |
PARK YOUNG-WOO;CHOI JUNG-DAL;SIM JAE-SUNG |
分类号 |
H01L21/302 |
主分类号 |
H01L21/302 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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