发明名称 METHOD FOR FABRICATING SEMICONDUCTOR DEVICE
摘要 <p>A method for fabricating a semiconductor device in which fabrication efficiency of the semiconductor device is enhanced by managing a photoresist process well. The method for fabricating a semiconductor device comprises a step for forming a photoresist film on a semiconductor substrate, a step for exposing the photoresist film under different exposure conditions for every shot by using a mask in which a predetermined pattern for evaluating process is formed, a step for forming a photoresist structure on the semiconductor substrate by developing the photoresist film under predetermined conditions, a step for irradiating the surface of the semiconductor substrate on which the photoresist structure is formed with an electron beam, a step for measuring a substrate current generated in the semiconductor substrate through irradiation with an electron beam, and a step for calculating a process window from the waveform of the substrate current.</p>
申请公布号 WO2007102192(A1) 申请公布日期 2007.09.13
申请号 WO2006JP304286 申请日期 2006.03.06
申请人 FAB SOLUTIONS, INC.;YAMADA, KEIZO 发明人 YAMADA, KEIZO
分类号 H01L21/027;G03F7/20;H01L21/66 主分类号 H01L21/027
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