Semiconductor arrangement, e.g. read only memory, has line with rectangular tip provided opposite to another rectangular tip of another line for forming tip-to-tip characteristic, where two lines are formed as individual continuous line

摘要

The arrangement has a line (126) with a rectangular tip (128) that is provided opposite to another rectangular tip (124) of another line (122) for forming a tip-to-tip characteristic (120), where the two lines are formed as an individual continuous line in a lithographic step. A contact-like characteristic is formed on the individual continuous line for separation of the individual continuous line. The two rectangular tips of the two lines are provided in another lithographic step. The two lines include polysilicon conductor, where the two lines overlap a diffusion region, respectively. An independent claim is also included for the production of a semiconductor arrangement.