RESISTANCE RANDOM MEMORY DEVICE

摘要

A resistive memory device is provided to decrease the consumption of power by reducing remarkably on-current compared to a conventional resistive memory device using a doped oxide layer formed on an RRAM(Resistance Random Access Memory) material. A resistive memory device includes a lower electrode(21), a first oxide layer, a current control layer and an upper electrode. The first oxide layer(22) is formed on the lower electrode. The first oxide layer is capable of storing information by using two resistive states. The current control layer(23) is formed on the first oxide layer. The current control layer is made of a second oxide material. The upper electrode(24) is formed on the current control layer. The first oxide layer is made of one selected from a group consisting of NiOx, ZrOx, Nb2O5-x, HfO, ZnO, WC3, CoO, CuO2, and TiO2. The current control layer is made of one selected from a group consisting of a transitional metal doped ZnOx and RuOx.