METHOD FOR REMOVING THE METAL POLYMER GENERATED DURING THE SEMICONDUCTOR FABRICATING PROCESS

摘要

A method for removing a metal polymer generated from a semiconductor manufacturing process is provided to enhance a metal polymer removing efficiency without the attack against a metal line by using a metal polymer removing chemical material under enhanced chemical treatment conditions. A metal is deposited on a semiconductor device. A patterning process is performed on the metal. At this time, a metal polymer is generated on the resultant structure. The metal polymer is removed from the resultant structure. The metal polymer removing process is performed using a chemical material containing H2SO4, H2O2, and HF. The mixing ratios of H2SO4, H2O2 and HF are 5 to 12 wt%, 3 to 8 wt% and 100 to 300 ppm. The temperature of the chemical material under the metal polymer removing process is in a range of 18 °C ± 1 °C.