METHOD OF DEPOSITING TITANIUM OXIDE FILM USING GAS SEPARATION TYPE SHOWERHEAD

摘要

A method of depositing a titanium oxide film using a gas separation type showerhead is provided to deposit an amorphous titanium oxide film that does not contain organic materials at a room temperature by using the gas separation type showerhead, and make it not necessary to perform a separate heat treatment process for removing the organic materials after depositing the amorphous titanium oxide film. A method of depositing a titanium oxide film using a gas separation type showerhead comprises: a step(S110) of feeding argon gas into a reaction chamber through an inner feeding pipe of a gas feeding module of the gas separation type showerhead; a step(S120) of applying a predetermined power to a common electrode in a lower part of the gas separation type showerhead; a step(S130) of feeding oxygen gas into the reaction chamber through an outer feeding pipe of the gas feeding module, thereby oxidizing a substrate surface for a predetermined time; a step(S140) of feeding a titanium precursor comprising titanium element into the reaction chamber through the inner feeding pipe of the gas feeding module, thereby depositing a titanium oxide film onto the substrate surface for a predetermined time; and a step(S150) of feeding argon and oxygen into the reaction chamber for a predetermined time, thereby stabilizing the substrate surface while removing a titanium precursor remained in the reaction chamber and organic materials of the deposited titanium oxide film.