| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a phase-change random access memory the structure of which has been improved so that the adhesion of a phase-change substance layer is improved, and a method of manufacturing the same. <P>SOLUTION: A switching element and a storage node linked with the switching element are provided and the storage node is a phase-change random access memory having a bottom electrode, a top electrode, a phase-change substance layer interposed between the bottom electrode and the top electrode, and an adhesion interfacial layer interposed between the bottom electrode and the phase-change substance layer. The adhesion interfacial layer is formed from a Ge-N or Ge-O-N substance. <P>COPYRIGHT: (C)2007,JPO&INPIT |
