| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide an ITO sputtering target capable of reducing the frequency of arcing generation, and a production method therefore. <P>SOLUTION: The ITO sputtering target consists of substantially indium, tin and oxygen. A sintered body is constituted of at least three-phase structure consisting of a base phase of cubic indium oxide, fine particles present inside the base phase, and an intermediate compound phase consisting of an oxide of indium and tin. The maximum particle diameter of fine particles in the base phase when observing an arbitrary section of the sintered body by using a scanning electric microscope is ≤ 0.4 μm. Raw material powder for indium oxide and raw material powder for tin oxide are mixed; the powdery mixture is compacted, and the compact is sintered in an oxygen flow at the sintering temperature of ≥ 1,500°C and < 1,650°C. The ITO sputtering target can be obtained thereafter through the temperature drop from at least 1,400°C to 1,300°C at the temperature-dropping rate of ≥200°C/hour. <P>COPYRIGHT: (C)2007,JPO&INPIT |
