| 摘要 |
PROBLEM TO BE SOLVED: To provide a Schottky barrier semiconductor device and a method of manufacturing the same which improve resistance to static surge while obtaining device characteristics and voltage withstand performance. SOLUTION: A low-concentration N-type epitaxial layer 11 is stacked on a high-concentration N-type semiconductor substrate 10. Next, boron is injected onto the low-concentration N-type epitaxial layer 11 by ion injection and so on to form low-concentration P-type guard ring areas 14a. After that, by using ion injection, annealing, and so on, high-concentration P-type guard ring areas 14b are formed on the surfaces of the low-concentration P-type guard ring areas 14a so as to completely cover the low-concentration P-type guard ring areas 14a. Thereafter, a silicon oxide film 12, a barrier metal layer1, an electrode 15, and an electrode 16 are sequentially formed thereon. COPYRIGHT: (C)2007,JPO&INPIT |
