| 摘要 |
A body connection structure for a SOI MOS transistor is described, including a first and a second control transistors. The first control transistor includes a gate electrically connecting with the gate of the SOI MOS transistor, a first S/D region electrically connecting with the first S/D region of the SOI MOS transistor and a second S/D region electrically connecting with the body layer of the SOI MOS transistor. The second control transistor includes a gate electrically connecting with the gate of the SOI MOS transistor, a first S/D region electrically connecting with the second S/D region of the SOI MOS transistor and a second S/D region electrically connecting with the body layer of the SOI MOS transistor.
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