| 摘要 |
A semiconductor device is provided to improve an ESD breakdown voltage of the semiconductor device by decreasing relatively a minimum distance between a guard band and a doped region connected to an external terminal in a protection element compared to that in an internal circuit. A semiconductor device includes a protection element(102,103) and an internal circuit(202,203). A first minimum distance between a first guard band and a first doped region connected to a first external terminal in the protection element is shorter than a second minimum distance between a second guard band and a second doped region connected to a second external terminal in the internal circuit. An MOS transistor is used as the protection element. The first doped region of the protection element is a drain region or a source region.
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